Ultrafast and band-selective Auger recombination in InGaN quantum wells
- Columbia Univ., New York, NY (United States). Dept. of Chemistry
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
In InGaN quantum well based light-emitting diodes, Auger recombination is believed to limit the quantum efficiency at high injection currents. Here in this paper, we report the direct observation of carrier loss from Auger recombination on a sub-picosecond timescale in a single InGaN quantum well using time-resolved photoemission. Selective excitations of different valence sub-bands reveal that the Auger rate constant decreases by two orders of magnitude as the effective hole mass decreases, confirming the critical role of momentum conservation.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1370402
- Alternate ID(s):
- OSTI ID: 1245500
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 14; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 15 works
Citation information provided by
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