Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity
- Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., Stony Brook, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Univ. of Nebraska, Lincoln, NE (United States)
We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors(FETs) following doping with CdSe/ZnS core/shell quantum dots(QDs). The hybrid QD-SnS2 FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS2-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS2 is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QDphotoluminescence and SnS2 optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS2. Furthermore, we also find enhanced charge carrier mobility in hybrid QD-SnS2 FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC00112704; SC0012704
- OSTI ID:
- 1245395
- Alternate ID(s):
- OSTI ID: 1243145
- Report Number(s):
- BNL-111989-2016-JA; APPLAB; KC0403020
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 12; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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