High temperature interface superconductivity

Gozar, A.; Bozovic, I.

doi:10.1016/j.physc.2016.01.003

Title: High temperature interface superconductivity

Journal Article · Wed Jan 20 00:00:00 EST 2016 · Physica. C, Superconductivity

DOI:https://doi.org/10.1016/j.physc.2016.01.003· OSTI ID:1245374

Gozar, A. ^[1]; Bozovic, I. ^[2]

Yale Univ., New Haven, CT (United States)
Yale Univ., New Haven, CT (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)

High-T_c superconductivity at interfaces has a history of more than a couple of decades. In this review we focus our attention on copper-oxide based heterostructures and multi-layers. We first discuss the technique, atomic layer-by-layer molecular beam epitaxy (ALL-MBE) engineering, that enabled High-T_c Interface Superconductivity (HT-IS), and the challenges associated with the realization of high quality interfaces. Then we turn our attention to the experiments which shed light on the structure and properties of interfacial layers, allowing comparison to those of single-phase films and bulk crystals. Both ‘passive’ hetero-structures as well as surface-induced effects by external gating are discussed. Here, we conclude by comparing HT-IS in cuprates and in other classes of materials, especially Fe-based superconductors, and by examining the grand challenges currently laying ahead for the field.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704

OSTI ID:: 1245374

Alternate ID(s):: OSTI ID: 1359738

Report Number(s):: BNL-111774-2016-JA; R&D Project: MA509MACA; KC0203020

Journal Information:: Physica. C, Superconductivity, Vol. 521-522, Issue C; ISSN 0921-4534

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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