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Title: Defects in AlN as candidates for solid-state qubits

Journal Article · · Physical Review B

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC52-07NA27344
OSTI ID:
1245041
Journal Information:
Physical Review B, Journal Name: Physical Review B Vol. 93 Journal Issue: 16; ISSN 2469-9950
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 38 works
Citation information provided by
Web of Science

References (31)

Universal Dynamical Decoupling of a Single Solid-State Spin from a Spin Bath journal September 2010
A paramagnetic neutral V Al O N center in wurtzite AlN for spin qubit application journal August 2013
Hybrid functional calculations of D X centers in AlN and GaN journal February 2014
Valence band splittings and band offsets of AlN, GaN, and InN journal October 1996
Hybrid functionals based on a screened Coulomb potential journal May 2003
Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1) journal November 2004
Electrostatic interactions between charged defects in supercells journal December 2010
Quantum computing with defects journal April 2010
Quantum computing with defects journal October 2013
Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth journal January 2011
Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors journal April 2012
Optically Controlled Switching of the Charge State of a Single Nitrogen-Vacancy Center in Diamond at Cryogenic Temperatures journal April 2013
Spin-Light Coherence for Single-Spin Measurement and Control in Diamond journal October 2010
Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations journal January 2009
Sulfur doping of AlN and AlGaN for improved n-type conductivity: Sulfur doping of AlN and AlGaN for improved n-type conductivity journal July 2015
Single-Shot Readout of a Single Nuclear Spin journal July 2010
First-principles calculations for point defects in solids journal March 2014
Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] journal June 2006
Theory of Neutral Divacancy in SiC: A Defect for Spintronics journal April 2010
Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams journal October 2007
Defects in SiC for quantum computing journal May 2011
Room temperature coherent control of defect spin qubits in silicon carbide journal November 2011
Polytype control of spin qubits in silicon carbide journal May 2013
Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN journal October 2007
Report on the growth of bulk aluminum nitride and subsequent substrate preparation journal October 2001
Coherent control of single spins in silicon carbide at room temperature journal December 2014
Band structure and fundamental optical transitions in wurtzite AlN journal December 2003
UV transparent single-crystalline bulk AlN substrates journal January 2010
Shallow donor and DX states of Si in AlN journal February 2011
Role of screening in the density functional applied to transition-metal defects in semiconductors journal May 2013
Diffusivity of native defects in GaN journal January 2004

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