Metasurfaces and Epsilon-Near-Zero Modes in Semiconductors.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1244894
- Report Number(s):
- SAND2015-0141C
560404
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the nanometa 2015 held January 5-8, 2015 in seefeld, austria.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Brener, Igal. Metasurfaces and Epsilon-Near-Zero Modes in Semiconductors.. United States: N. p., 2015.
Web.
Brener, Igal. Metasurfaces and Epsilon-Near-Zero Modes in Semiconductors.. United States.
Brener, Igal. 2015.
"Metasurfaces and Epsilon-Near-Zero Modes in Semiconductors.". United States. https://www.osti.gov/servlets/purl/1244894.
@article{osti_1244894,
title = {Metasurfaces and Epsilon-Near-Zero Modes in Semiconductors.},
author = {Brener, Igal},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1244894},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}
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