Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Electricity (OE)
- OSTI Identifier:
- 1244879
- Report Number(s):
- SAND2015-0073C
558329
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the Electronic Materials and Applications 2015 held January 21-23, 2015 in Orlando, FL.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ihlefeld, Jon, Brumbach, Michael T., Allerman, Andrew A., Wheeler, David Roger, and Atcitty, Stanley. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.. United States: N. p., 2015.
Web.
Ihlefeld, Jon, Brumbach, Michael T., Allerman, Andrew A., Wheeler, David Roger, & Atcitty, Stanley. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.. United States.
Ihlefeld, Jon, Brumbach, Michael T., Allerman, Andrew A., Wheeler, David Roger, and Atcitty, Stanley. 2015.
"Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.". United States. https://www.osti.gov/servlets/purl/1244879.
@article{osti_1244879,
title = {Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.},
author = {Ihlefeld, Jon and Brumbach, Michael T. and Allerman, Andrew A. and Wheeler, David Roger and Atcitty, Stanley},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1244879},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}
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