New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

Hao, Boyi; Asthana, Anjana; Hazaveh, Paniz Khanmohammadi; Bergstrom, Paul L.; Banyai, Douglas; Savaikar, Madhusudan A.; Jaszczak, John A.; Yap, Yoke Khin

doi:10.1038/srep20293

Title: New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

Journal Article · Fri Feb 05 00:00:00 EST 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep20293· OSTI ID:1242363

Hao, Boyi ^[1]; Asthana, Anjana ^[2]; Hazaveh, Paniz Khanmohammadi ^[3]; Bergstrom, Paul L. ^[3]; Banyai, Douglas ^[1]; Savaikar, Madhusudan A. ^[1]; Jaszczak, John A. ^[1]; Yap, Yoke Khin ^[1]

Michigan Technological Univ., Houghton, MI (United States). Dept. of Physics
Michigan Technological Univ., Houghton, MI (United States). Dept. of Materials Science and Engineering
Michigan Technological Univ., Houghton, MI (United States). Dept. of Electrical and Computer Engineering

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (insitu STM-TEM). Ultimately, as suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.

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Research Organization:: Michigan Technological Univ., Houghton, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012762

OSTI ID:: 1242363

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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