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Title: Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlling the manner in which their bands align at interfaces. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO3 and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural, electrical and photoemission characterization of SrZrxTi1-xO33-Ge heterojunctions for x = 0.2 to 0.75 and demonstrate the band offset can be tuned from type-II to type-I. The type-I band offset provides a platform to integrate the dielectric, ferroelectric and ferromagnetic functionalities of oxides with semiconducting devices.
 [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [1] ;  [4] ;  [3] ;  [1]
  1. Univ. of Texas, Arlington, TX (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Nanjing Univ. (China)
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2196-7350; 48341; KC0203020
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Advanced Materials Interfaces; Journal Volume: 2; Journal Issue: 4
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
Country of Publication:
United States
42 ENGINEERING N00784; Band-gap engineering; Environmental Molecular Sciences Laboratory