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Title: Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

Patent ·
OSTI ID:1240427

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
9,276,382
Application Number:
14/624,074
OSTI ID:
1240427
Resource Relation:
Patent File Date: 2015 Feb 17
Country of Publication:
United States
Language:
English

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