Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1240331
- Report Number(s):
- SAND2015-1378C
567225
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the APS March Meeting held March 2-6, 2015 in San Antonio, TX.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
England, Troy Daniel. Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.. United States: N. p., 2015.
Web.
England, Troy Daniel. Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.. United States.
England, Troy Daniel. 2015.
"Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.". United States. https://www.osti.gov/servlets/purl/1240331.
@article{osti_1240331,
title = {Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.},
author = {England, Troy Daniel},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1240331},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Feb 01 00:00:00 EST 2015},
month = {Sun Feb 01 00:00:00 EST 2015}
}
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