skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1240331
Report Number(s):
SAND2015-1378C
567225
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the APS March Meeting held March 2-6, 2015 in San Antonio, TX.
Country of Publication:
United States
Language:
English

Citation Formats

England, Troy Daniel. Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.. United States: N. p., 2015. Web.
England, Troy Daniel. Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.. United States.
England, Troy Daniel. 2015. "Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.". United States. https://www.osti.gov/servlets/purl/1240331.
@article{osti_1240331,
title = {Measurement modeling and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout.},
author = {England, Troy Daniel},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1240331}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Feb 01 00:00:00 EST 2015},
month = {Sun Feb 01 00:00:00 EST 2015}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: