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This content will become publicly available on January 1, 2017

Title: High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential

In the presence of a lateral periodic potential modulation, two-dimensional electrons may exhibit interesting phenomena, such as a graphene-like energy-momentum dispersion, Bloch oscillations, or the Hofstadter butterfly band structure. To create a sufficiently strong potential modulation using conventional semiconductor heterostructures, aggressive device processing is often required, unfortunately resulting in strong disorder that masks the sought-after effects. Here, we report a novel fabrication process flow for imposing a strong lateral potential modulation onto a capacitively induced two-dimensional electron system, while preserving the host material quality. Using this process flow, the electron density in a patterned Si/SiGe heterostructure can be tuned over a wide range, from 4.4 × 1010 cm–2 to 1.8 × 1011 cm–2, with a peak mobility of 6.4 × 105 cm2/V·s. The wide density tunability and high electron mobility allow us to observe sequential emergence of commensurability oscillations as the density, the mobility, and in turn the mean free path, increase. Magnetic-field-periodic quantum oscillations associated with various closed orbits also emerge sequentially with increasing density. We show that, from the density dependence of the quantum oscillations, one can directly extract the steepness of the imposed superlattice potential. Lastly, this result is then compared to a conventional lateral superlattice modelmore » potential.« less
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. National Taiwan Univ., Taipei (Taiwan); National Nano Device Lab., Hsinchu (Taiwan)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2045-2322; 618630
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 2; Journal ID: ISSN 2045-2322
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States