Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

Fleming, R. M.; Seager, C. H.; Lang, D. V.; Campbell, J. M.

doi:10.1063/1.4923358

Title: Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

Journal Article · Thu Jul 02 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4923358· OSTI ID:1239986

^[1]; Seager, C. H. ^[1]; Lang, D. V. ^[1]; Campbell, J. M. ^[1]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V₂) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1239986

Alternate ID(s):: OSTI ID: 1228652

Report Number(s):: SAND-2015-5982J; JAPIAU; 618345

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 1; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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References (24)

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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
deep level transient spectroscopy
electric fields
transistors
carrier density
charge injection

Title: Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

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