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This content will become publicly available on January 13, 2017

Title: Short-wavelength interband cascade infrared photodetectors operating above room temperature

High temperature operation (250–340 K) of short-wavelength interband cascade infrared photodetectors (ICIPs) with InAs/GaSb/Al0.2In0.8Sb/GaSb superlattice absorbers has been demonstrated with a 50% cutoff wavelength of 2.9 μm at 300 K. Two ICIP structures, one with two and the other with three stages, were designed and grown to explore this multiple-stage architecture. At λ = 2.1 μm, the two- and three-stage ICIPs had Johnson-noise-limited detectivities of 5.1 × 109 and 5.8 ×109 cm Hz1/2/W, respectively, at 300 K. The better device performance of the three-stage ICIP over the two-stage ICIP confirmed the advantage of more stages for this cascade architecture. Furthermore, an Arrhenius activation energy of 450 meV is extracted for the bulk resistance-area product, which indicates the dominance of the diffusion current at these high temperatures.
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1]
  1. Univ. of Oklahoma, Norman, OK (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0021-8979; JAPIAU; 617683
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 2; Journal ID: ISSN 0021-8979
American Institute of Physics (AIP)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY III-V semiconductors; infrared; interband cascade; photodetector; short wavelength; superlattices; activation energies; dark currents; diffusion