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Title: Luminescence of Ce 3+ -Doped MB2Si2O8 (M = Sr, Ba): A Deeper Insight into the Effects of Electronic Structure and Stokes Shift

Journal Article · · Journal of Physical Chemistry. C
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  1. Sun Yat-Sen Univ., Guangzhou, (China)
  2. Chongqing Univ. of Posts and Telecommunications (China)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. Chinese Academy of Sciences (CAS), Beijing (China)

A series of Sr 1 -2x CexNaxB2Si2O8 and Ba 1-2x CexKxB2Si2O8 (x = 0.005, 0.01, 0.02, 0.04, 0.06, 0.08) samples were synthesized by a high-temperature solid-state reaction. The low temperature excitation, emission, and fluorescence decay spectra together demonstrated that all spectral bands arise from the Ce 3+ ions located at only one kind of lattice site. The first-principles calculations of the structural and electronic properties of pure and Ce 3+2Si2O8 (M = Sr, Ba) were performed, and the obtained results were used for understanding the structural changes after doping and identification of the observed position of the host absorption bands. The measured 4f-5d excitation and emission spectra of Ce3+ ions doped in MB2Si2O8 were analyzed and simulated in the framework of the crystal-field (CF) theory. The electron-phonon coupling effect generally ignored in most studies published so far was also taken into account by applying the configurational coordinate model. The validity of such a combined insight into the 5d CF energy level positions and the Stokes shift has been confirmed by analyzing the dependence of the Ce 3+

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Natural Science Foundation of China (NNSFC)
DOE Contract Number:
AC02-06CH11357
OSTI ID:
1239321
Journal Information:
Journal of Physical Chemistry. C, Vol. 120, Issue 1; ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English