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This content will become publicly available on December 1, 2016

Title: Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions

In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0018-9499; 615276
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 62; Journal Issue: 6; Journal ID: ISSN 0018-9499
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY displacement damage; IBIC; ion beam induced charge; silicon detectors