Thickness-dependent electron–lattice equilibration in laser-excited thin bismuth films

Sokolowski-Tinten, K.; Li, R. K.; Reid, A. H.; Weathersby, S. P.; Quirin, F.; Chase, T.; Coffee, R.; Corbett, J.; Fry, A.; Hartmann, N.; Hast, C.; Hettel, R.; Hoegen, M. Horn von; Janoschka, D.; Lewandowski, J. R.; Ligges, M.; Heringdorf, F. Meyer zu; Shen, X.; Vecchione, T.; Witt, C.; Wu, J.; Dürr, H. A.; Wang, X. J.

doi:10.1088/1367-2630/17/11/113047

Title: Thickness-dependent electron–lattice equilibration in laser-excited thin bismuth films

Journal Article · Sun Nov 01 00:00:00 EDT 2015 · New Journal of Physics

DOI:https://doi.org/10.1088/1367-2630/17/11/113047· OSTI ID:1238985

Sokolowski-Tinten, K.; Li, R. K.; Reid, A. H.; Weathersby, S. P.; Quirin, F.; Chase, T.; Coffee, R.; Corbett, J.; Fry, A.; Hartmann, N.; Hast, C.; Hettel, R.; Hoegen, M. Horn von; Janoschka, D.; Lewandowski, J. R.; Ligges, M.; Heringdorf, F. Meyer zu; Shen, X.; Vecchione, T.; Witt, C. more »

Electron–phonon coupling processes determine electronic transport properties of materials and are responsible for the transfer of electronic excess energy to the lattice. With decreasing device dimensions an understanding of these processes in nanoscale materials is becoming increasingly important. We use time-resolved electron diffraction to directly study energy relaxation in thin bismuth films after optical excitation. Precise measurements of the transient Debye–Waller-effect for various film thicknesses and over an extended range of excitation fluences allow to separate different contributions to the incoherent lattice response. While phonon softening in the electronically excited state is responsible for an immediate increase of the r.m.s. atomic displacement within a few hundred fs, 'ordinary' electron–phonon coupling leads to subsequent heating of the material on a few ps time-scale. Moreover, the data reveal distinct changes in the energy transfer dynamics which becomes faster for stronger excitation and smaller film thickness, respectively. The latter effect is attributed to a cross-interfacial coupling of excited electrons to phonons in the substrate.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1238985

Alternate ID(s):: OSTI ID: 1237587; OSTI ID: 1238989

Journal Information:: New Journal of Physics, Journal Name: New Journal of Physics Vol. 17 Journal Issue: 11; ISSN 1367-2630

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 23 works

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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
electron-phonon coupling
bismuth
thin films
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Title: Thickness-dependent electron–lattice equilibration in laser-excited thin bismuth films

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