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This content will become publicly available on January 27, 2017

Title: Influence of piezoelectric strain on the Raman spectra of BiFeO3 films deposited on PMN-PT substrates

In this study, BiFeO3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates with a conductive buffer layer (La0.7Sr0.3MnO3 or SrRuO3) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows to obtain a quantitative correlation between strain and the shift of the Raman-active phonons, ruling out the influence of extrinsic factors, such as growth conditions, crystalline quality of substrates, or film thickness. Using the Poisson number for BiFeO3 one can determine the volume change induced by strain, and therefore the Gr neisen parameters for specific phonon modes.
 [1] ;  [2] ;  [1] ;  [3] ;  [1]
  1. TU Bergakademie Freiberg, Freiberg (Germany)
  2. Martin-Luther-Univ., Halle (Germany); Institute for Metallic Materials, Dresden (Germany); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Martin-Luther-Univ., Halle (Germany); Institute for Metallic Materials, Dresden (Germany)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 4; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE piezoelectric fields; thin film structure; epitaxy; phonons; buffer layers