Thermoelectric Properties of Mg2(Ge,Sn) : Model and Optimization of ZT

Sun, Jifeng; Singh, David J.

doi:10.1103/PhysRevApplied.5.024006

Title: Thermoelectric Properties of ${Mg}_{2} (Ge, Sn)$ : Model and Optimization of $Z T$

Journal Article · Tue Feb 16 00:00:00 EST 2016 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.5.024006· OSTI ID:1371446

Sun, Jifeng ^[1]; Singh, David J. ^[1]

Univ. of Missouri, Columbia, MO (United States)

Here, we report an investigation of the thermoelectric properties of ${Mg}_{2} {Ge}_{1 - x} {Sn}_{x}$ solid solution with $x = 0.5$ using models based on first-principles calculations and experimental data. The model gives transport properties including the figure of merit $Z T$ as functions of carrier concentration and temperature. Moreover, the model for the $n$ -type predicts high $Z T$ at optimized doping, and suggests that the $Z T$ value can exceed 2 at $T = 1000 K$ .

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001299; FG02-09ER46577; SC0001299/DE-FG02-09ER46577

OSTI ID:: 1371446

Alternate ID(s):: OSTI ID: 1238089

Journal Information:: Physical Review Applied, Vol. 5, Issue 2; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 44 works

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