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Title: Nanoscale deformation analysis with high-resolution transmission electron microscopy and digital image correlation

Journal Article · · Journal of Applied Mechanics
DOI:https://doi.org/10.1115/1.4031332· OSTI ID:1237660
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  1. Georgia Inst. of Technology, Atlanta, GA (United States)
  2. Univ. of Pittsburgh, Pittsburgh, PA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We present an application of the digital image correlation (DIC) method to high-resolution transmission electron microscopy (HRTEM) images for nanoscale deformation analysis. The combination of DIC and HRTEM offers both the ultrahigh spatial resolution and high displacement detection sensitivity that are not possible with other microscope-based DIC techniques. We demonstrate the accuracy and utility of the HRTEM-DIC technique through displacement and strain analysis on amorphous silicon. Two types of error sources resulting from the transmission electron microscopy (TEM) image noise and electromagnetic-lens distortions are quantitatively investigated via rigid-body translation experiments. The local and global DIC approaches are applied for the analysis of diffusion- and reaction-induced deformation fields in electrochemically lithiated amorphous silicon. As a result, the DIC technique coupled with HRTEM provides a new avenue for the deformation analysis of materials at the nanometer length scales.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1237660
Report Number(s):
SAND-2015-4991J; 594412
Journal Information:
Journal of Applied Mechanics, Vol. 82, Issue 12; ISSN 0021-8936
Publisher:
ASMECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 21 works
Citation information provided by
Web of Science

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Cited By (1)