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This content will become publicly available on December 17, 2016

Title: In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation

Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). The occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were observed. Furthermore, the obtained experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a model for the deformation behavior of a-Si under indentation loading.
 [1] ;  [2] ;  [3] ;  [4] ;  [2]
  1. National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States); Univ. of Maryland, College Park, MD (United States)
  2. National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States)
  3. Australian National Univ., Canberra (Australia)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 92; Journal Issue: 21; Journal ID: ISSN 1098-0121
American Physical Society (APS)
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States