skip to main content

SciTech ConnectSciTech Connect

This content will become publicly available on December 24, 2016

Title: Exploring the influence of hold time on the onset of plastic deformation in silicon

The formation of silicon (Si) in its -Sn form is known to be nucleation limited, with an undetermined period of time between when critical pressure for the trans- formation is reached and when the transformation actually occurs. In this letter, we use nanoindentation to apply critical pressure to diamond cubic Si and hold the sample under pressure to promote deformation via phase transformation and crystalline defects. We report that the number of indents in which phase transformation is observed increases with increasing hold time. Interestingly, the number of indents in which crystalline defects are observed also increase with increasing hold time, suggesting crystalline defects are also nucleation limited. Raman spectroscopy and cross-sectional transmission electron microscopy is used to show that these two deformation mechanisms are mutually exclusive under the indentation conditions used within this letter.
 [1] ;  [2] ;  [3] ;  [3]
  1. Australian National Univ., Canberra (Australia)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Australian National Univ. Canberra (Australia)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 24; Journal ID: ISSN 0021-8979
American Institute of Physics (AIP)
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
hydrostatics; nucleation; dislocations; Raman spectra; nanotechnology