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Title: Ultrathin nanosheets of CrSiTe3. A semiconducting two-dimensional ferromagnetic material

Journal Article · · Journal of Materials Chemistry C
DOI:https://doi.org/10.1039/C5TC03463A· OSTI ID:1237632
 [1];  [1];  [2];  [1];  [1];  [1];  [1];  [3];  [4];  [1];  [1];  [1];  [2];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Rensselaer Polytechnic Institute (RPI), Troy, NY (United States)
  4. Rensselaer Polytechnic Institute (RPI), Troy, NY (United States)

Finite range ferromagnetism and antiferromagnetism in two-dimensional (2D) systems within an isotropic Heisenberg model at non-zero temperature were originally proposed to be impossible. However, recent theoretical studies using an Ising model have recently shown that 2D magnetic crystals can exhibit magnetism. Experimental verification of existing 2D magnetic crystals in this system has remained elusive. In this work we for the first time exfoliate the CrSiTe3, a bulk ferromagnetic semiconductor, to mono- and few-layer 2D crystals onto a Si/SiO2 substrate. The Raman spectra show the good stability and high quality of the exfoliated flakes, consistent with the computed phonon spectra of 2D CrSiTe3, giving a strong evidence for the existence of 2D CrSiTe3 crystals. When the thickness of the CrSiTe3 crystals is reduced to few-layers, we observed a clear change in resistivity at 80~120 K, consistent with the theoretical calculations on the Curie temperature (Tc) of ~80 K for the magnetic ordering of 2D CrSiTe3 crystals. As a result, the ferromagnetic mono- and few-layer 2D CrSiTe3 indicated here should enable numerous applications in nano-spintronics.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1237632
Journal Information:
Journal of Materials Chemistry C, Vol. 4, Issue 2; ISSN 2050-7526
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 216 works
Citation information provided by
Web of Science

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Cited By (52)

Robust Above‐Room‐Temperature Ferromagnetism in Few‐Layer Antimonene Triggered by Nonmagnetic Adatoms journal January 2019
Metal Thio- and Selenophosphates as Multifunctional van der Waals Layered Materials journal August 2017
Liquid-Alloy-Assisted Growth of 2D Ternary Ga 2 In 4 S 9 toward High-Performance UV Photodetection journal November 2018
Intrinsic Van Der Waals Magnetic Materials from Bulk to the 2D Limit: New Frontiers of Spintronics journal May 2019
Van der Waals 2D Transition Metal Tellurides journal August 2019
2D Ternary Chalcogenides journal May 2018
Simulation of Transition Metal Dichalcogenides book January 2019
The emerging ferroic orderings in two dimensions journal November 2019
Tunable electronic structure and magnetic coupling in strained two-dimensional semiconductor MnPSe3 journal May 2018
Effect of Coulomb Interactions on the Electronic and Magnetic Properties of Two-Dimensional CrSiTe3 and CrGeTe3 Materials journal September 2018
Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit journal June 2017
Hard magnetic properties in nanoflake van der Waals Fe3GeTe2 journal April 2018
Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3 journal June 2018
Searching for materials with reduced dimension journal February 2018
Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates journal February 2018
Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor journal July 2018
2DMatPedia, an open computational database of two-dimensional materials from top-down and bottom-up approaches journal June 2019
Probing and controlling magnetic states in 2D layered magnetic materials journal September 2019
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Recent advances in ternary two-dimensional materials: synthesis, properties and applications journal January 2017
Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX 3 (X = Br, I) monolayers journal January 2018
Ferromagnetism in magnesium chloride monolayer with an unusually large spin-up gap journal January 2018
The direct observation of ferromagnetic domain of single crystal CrSiTe 3 journal May 2018
Magnetic and electronic properties of Cr 2 Ge 2 Te 6 monolayer by strain and electric-field engineering journal March 2019
Surface-vacancy-induced metallicity and layer-dependent magnetic anisotropy energy in Cr2Ge2Te6 journal September 2019
Revealing antiferromagnetic transition of van der Waals MnPS 3 via vertical tunneling electrical resistance measurement journal August 2019
Two-dimensional van der Waals spinterfaces and magnetic-interfaces journal March 2020
Opportunities and challenges of 2D magnetic van der Waals materials: magnetic graphene? journal June 2016
Two dimensional ferromagnetic semiconductor: monolayer CrGeS 3 journal October 2019
First-principles study the single-layer transition metal trihalide CrXSe 3 (X  =  Sn, Ge, Si) as monolayer ferromagnetic semiconductor journal November 2019
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Two Dimensional Ferromagnetic Semiconductor: Monolayer CrGeS$_3$ text January 2019

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