Self-consistent simulation of CdTe solar cells with active defects

Brinkman, Daniel; Guo, Da; Akis, Richard; Ringhofer, Christian; Sankin, Igor; Fang, Tian; Vasileska, Dragica

doi:10.1063/1.4927155

Title: Self-consistent simulation of CdTe solar cells with active defects

Journal Article · Tue Jul 21 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4927155· OSTI ID:1237015

Brinkman, Daniel ^[1]; Guo, Da ^[1]; Akis, Richard ^[1]; Ringhofer, Christian ^[1]; Sankin, Igor ^[2]; Fang, Tian ^[2]; Vasileska, Dragica ^[1]

Arizona State Univ., Tempe, AZ (United States)
First Solar, Perrysburg, OH (United States)

We demonstrate a self-consistent numerical scheme for simulating an electronic device which contains active defects. As a specific case, we consider copper defects in cadmium telluride solar cells. The presence of copper has been shown experimentally to play a crucial role in predicting device performance. The primary source of this copper is migration away from the back contact during annealing, which likely occurs predominantly along grain boundaries. We introduce a mathematical scheme for simulating this effect in 2D and explain the numerical implementation of the system. Lastly, we will give numerical results comparing our results to known 1D simulations to demonstrate the accuracy of the solver and then show results unique to the 2D case.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: EE0006344

OSTI ID:: 1237015

Alternate ID(s):: OSTI ID: 1228689

Report Number(s):: DOE-ASU-0006344-5; JAPIAU

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 3; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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References (35)

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