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Title: Atom Probe Tomography of Nanoscale Electronic Materials

Atom probe tomography (APT) is a mass spectrometry based on time-of-flight measurements which also concurrently produces 3D spatial information. The reader is referred to any of the other papers in this volume or to the following references for further information 4–8. The current capabilities of APT, such as detecting a low number of dopant atoms in nanoscale devices or segregation at a nanoparticle interface, make this technique an important component in the nanoscale metrology toolbox. In this manuscript, we review some of the applications of APT to nanoscale electronic materials, including transistors and finFETs, silicide contact microstructures, nanowires, and nanoparticles.
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Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0883-7694; 47607; KP1704020
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: MRS Bulletin; Journal Volume: 41; Journal Issue: 1
Materials Research Society
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
Country of Publication:
United States
Environmental Molecular Sciences Laboratory