skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Dopant Activation in Sn-Doped Ga2O3 Investigated by X-Ray Absorption Spectroscopy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4938123· OSTI ID:1236765
; ; ; ; ; ; ; ; ; ; ; ;

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1236765
Report Number(s):
NREL/JA-5K00-65774
Journal Information:
Applied Physics Letters, Vol. 107, Issue 25; Related Information: Applied Physics Letters; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

References (32)

Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β–Ga 2 O 3 journal June 2012
Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films journal December 2013
Approaching chemical accuracy with density functional calculations: Diatomic energy corrections journal February 2013
Atomic Layer Deposition of Ga 2 O 3 Films Using Trimethylgallium and Ozone journal October 2012
β-Ga 2 O 3 and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga 2 O 3 potential for next generation of power devices conference March 2014
Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping journal May 2008
Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells journal May 2014
Extended X-ray absorption fine structure spectroscopy of selenium-hyperdoped silicon journal October 2013
X-Ray Absorption Spectroscopy Study of Structure and Stability of Disordered (Cu<inline-formula> <tex-math>$_{\bf 2}$</tex-math></inline-formula>SnS<inline-formula><tex-math>$_{\bf 3}$</tex-math></inline-formula>) <inline-formula><tex-math>$_{\bf 1-x}$</tex-math></inline-formula>(ZnS)<inline-formula><tex-math>$_{\bf x}$</tex-math> </inline-formula> Alloys journal January 2015
Gallium oxide thin films: A new material for high-temperature oxygen sensors journal June 1991
High-Efficiency Cu 2 O-Based Heterojunction Solar Cells Fabricated Using a Ga 2 O 3 Thin Film as N-Type Layer journal April 2013
Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces journal September 2001
Low In solubility and band offsets in the small- x β-Ga 2 O 3 /(Ga 1− x In x ) 2 O 3 system journal January 2015
Visible and infrared luminescence study of Er doped β-Ga 2 O 3 and Er 3 Ga 5 O 12 journal February 2008
Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal journal June 2007
Electron paramagnetic resonance studies of Mn2+ ions in β-Ga2O3 single crystal journal April 2001
X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films journal June 2014
Development of gallium oxide power devices: Development of gallium oxide power devices journal November 2013
The impact of crystal symmetry on the electronic structure and functional properties of complex lanthanum chromium oxides journal January 2013
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy journal February 2012
Oxygen vacancies and donor impurities in β-Ga2O3 journal October 2010
ATHENA , ARTEMIS , HEPHAESTUS : data analysis for X-ray absorption spectroscopy using IFEFFIT journal June 2005
Electron paramagnetic resonance characterization of Cr3+ impurities in a β-Ga2O3 single crystal journal March 2003
Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide journal July 2014
Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces journal September 2001
High-Efficiency Cu 2 O-Based Heterojunction Solar Cells Fabricated Using a Ga 2 O 3 Thin Film as N-Type Layer journal April 2013
Gallium oxide thin films: A new material for high-temperature oxygen sensors journal June 1991
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy journal February 2012
X-Ray Absorption Spectroscopy Study of Structure and Stability of Disordered (Cu<inline-formula> <tex-math>$_{\bf 2}$</tex-math></inline-formula>SnS<inline-formula><tex-math>$_{\bf 3}$</tex-math></inline-formula>) <inline-formula><tex-math>$_{\bf 1-x}$</tex-math></inline-formula>(ZnS)<inline-formula><tex-math>$_{\bf x}$</tex-math> </inline-formula> Alloys journal January 2015
Approaching chemical accuracy with density functional calculations: Diatomic energy corrections journal February 2013
ATHENA , ARTEMIS , HEPHAESTUS : data analysis for X-ray absorption spectroscopy using IFEFFIT journal June 2005
Low In solubility and band offsets in the small- x β-Ga 2 O 3 /(Ga 1− x In x ) 2 O 3 system journal January 2015

Cited By (12)

Review of gallium-oxide-based solar-blind ultraviolet photodetectors journal January 2019
Oxygen deficiency and Sn doping of amorphous Ga 2 O 3 journal January 2016
Electrical, optical, and magnetic properties of Sn doped α-Ga 2 O 3 thin films journal July 2016
Precise control of the microstructural, optical, and electrical properties of ultrathin Ga 2 O 3 film through nanomixing with few atom-thick SiO 2 interlayer via plasma enhanced atomic layer deposition journal January 2018
Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors journal August 2019
Enhancement of the open circuit voltage of Cu 2 O/Ga 2 O 3 heterojunction solar cells through the mitigation of interfacial recombination journal May 2019
Group-III Sesquioxides: Growth, Physical Properties and Devices journal July 2017
β -Ga 2 O 3 for wide-bandgap electronics and optoelectronics journal October 2018
X-ray diffraction and Raman characterization of β-Ga 2 O 3 single crystal grown by edge-defined film-fed growth method journal November 2019
Elucidation of photovoltage origin and charge transport in Cu 2 O heterojunctions for solar energy conversion journal January 2019
A practical field guide to thermoelectrics: Fundamentals, synthesis, and characterization journal June 2018
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β − Ga 2 O 3 journal November 2019

Similar Records

Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy
Journal Article · Mon Dec 21 00:00:00 EST 2015 · Applied Physics Letters · OSTI ID:1236765
+10 more
Dopant activation in Sn-doped Ga[subscript 2]O[subscript 3] investigated by X-ray absorption spectroscopy
Journal Article · Wed Jun 15 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:1236765
+10 more
Dopant activation in Sn-doped Ga{sub 2}O{sub 3} investigated by X-ray absorption spectroscopy
Journal Article · Mon Dec 21 00:00:00 EST 2015 · Applied Physics Letters · OSTI ID:1236765
+8 more

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
atomic layer deposition
doping
pulsed laser deposition
x-ray absorption near edge structure
x-ray absorption spectroscopy