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Title: Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

Journal Article · · Nanotechnology
 [1];  [2];  [2];  [2];  [2];  [1]
  1. New Mexico State Univ., Las Cruces, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1236484
Report Number(s):
SAND-2015-9606J; 607600
Journal Information:
Nanotechnology, Vol. 27, Issue 1; ISSN 0957-4484
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

References (40)

Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition journal February 2008
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors journal July 2006
Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires journal August 2011
Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires journal February 2013
Kondo effect in a single-electron transistor journal January 1998
High electron mobility transistor based on a GaN‐AlxGa 1−xN heterojunction journal August 1993
Metal cluster enhanced organic solar cells journal February 2000
Thermoelectric Phenomena, Materials, and Applications journal August 2011
Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures journal September 1997
Radial modulation doping in core–shell nanowires journal January 2014
Contribution of radial dopant concentration to the thermoelectric properties of core-shell nanowires journal March 2013
Thermoelectric properties of InxGa1−xN alloys journal January 2008
One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires journal February 2012
Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition journal November 2006
Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films journal July 2008
Deep level optical spectroscopy of GaN nanorods journal September 2009
GaN nanowire surface state observed using deep level optical spectroscopy journal April 2010
Enhanced thermoelectric figure of merit in SiGe alloy nanowires by boundary and hole-phonon scattering journal October 2011
Thermoelectric power measurements of wide band gap semiconducting nanowires journal January 2009
The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN journal August 2005
Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact to n -GaN journal June 2002
Activation energies of Si donors in GaN journal May 1996
A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films journal August 2000
Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition journal May 2002
Size-dependent impurity activation energy in GaN nanowires journal April 2009
Experimental investigation of electron transport properties of gallium nitride nanowires journal July 2008
Electrical characterization of single GaN nanowires journal October 2005
Mechanism of two-dimensional electron gas formation in AlxGa1−xN/GaN heterostructures journal August 2002
Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors journal October 2001
Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure journal August 2010
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures journal December 2009
Determination of Transport Properties in Chromium Disilicide Nanowires via Combined Thermoelectric and Structural Characterizations journal June 2007
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures journal March 1999
Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors journal July 2013
Unusually Large Enhancement of Thermopower in an Electric Field Induced Two-Dimensional Electron Gas journal January 2012
Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3 journal January 2007
High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface journal December 2010
The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures journal February 2012
Temperature-Independent Two-Dimensional Hole Gas Confined at GaN/AlGaN Heterointerface journal September 2013
Observation of Anderson Localization in an Electron Gas journal May 1969

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Thermoelectric transport at F 4 TCNQ–silicon interface journal February 2019
Eco-friendly high-performance silicide thermoelectric materials journal February 2017
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