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Title: Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4932056· OSTI ID:1235314
 [1];  [1];  [1];  [1];  [2];  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Wright-Patterson Air Force Base, Ohio (United States)

Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombination centers.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1235314
Alternate ID(s):
OSTI ID: 1420514
Report Number(s):
SAND-2015-4640J; APPLAB; 590730
Journal Information:
Applied Physics Letters, Vol. 107, Issue 13; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

References (19)

Proposal for strained type II superlattice infrared detectors journal September 1987
Type-II superlattice photodiodes: an alternative for VLWIR detection conference October 2003
Superlattice parameters for optimum absorption in InAs/In x Ga 1− x Sb superlattice infrared detectors journal June 1995
The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review journal January 2004
Modeling of very long infrared wavelength InAs/GaInSb strained layer superlattice detectors conference December 2002
Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection journal October 2012
Optimum growth window for InAs/GaInSb superlattice materials tailored for very long wavelength infrared detection
  • Haugan, Heather J.; Brown, Gail J.; Mahalingam, Krishnamurthy
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 2 https://doi.org/10.1116/1.4864746
journal March 2014
Growth optimization studies to develop InAs/GaInSb superlattice materials for very long wavelength infrared detection journal May 2015
Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection journal September 2015
Type-II InAs/GaSb superlattices and detectors with λc >18μm conference May 2002
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials journal August 2010
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices journal March 2012
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices journal July 2014
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection journal June 2014
Intensity- and Temperature-Dependent Carrier Recombination in InAs / In As 1 x S b x Type-II Superlattices journal April 2015
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization journal November 2011
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence journal December 2010
Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices journal January 2014
Recombination lifetime in InAs–Ga1−xInxSb superlattices journal March 1994

Cited By (2)

Realizing high-responsive superlattice organic photodiodes by C60 and zinc phthalocyanine journal October 2018
Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing journal January 2019

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