Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Wright-Patterson Air Force Base, Ohio (United States)
Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombination centers.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1235314
- Alternate ID(s):
- OSTI ID: 1420514
- Report Number(s):
- SAND-2015-4640J; APPLAB; 590730
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 13; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 8 works
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