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Title: Mechanical flip-chip for ultra-high electron mobility devices

In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [4] ;  [1]
  1. McGill Univ., Montreal, QC (Canada)
  2. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Princeton Univ., Princeton, NJ (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2045-2322; 567371
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal Issue: C; Journal ID: ISSN 2045-2322
Nature Publishing Group
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
condensed-matter physics; electronics; photonics and device physics