Thermal transport in tantalum oxide films for memristive applications

Landon, Colin Donald; Wilke, Rudeger H. T.; Brumbach, Michael T.; Brennecka, Geoffrey L.; Blea-Kirby, Mia Angelica; Ihlefeld, Jon; Marinella, Matthew

doi:10.1063/1.4926921

Title: Thermal transport in tantalum oxide films for memristive applications

Journal Article · Wed Jul 15 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926921· OSTI ID:1235298

Landon, Colin Donald ^[1]; Wilke, Rudeger H. T. ^[1]; Brumbach, Michael T. ^[1]; Brennecka, Geoffrey L. ^[2]; Blea-Kirby, Mia Angelica ^[1]; Ihlefeld, Jon ^[1]; Marinella, Matthew ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Colorado School of Mines, Golden, CO (United States)

The thermal conductivity of amorphous TaO_x memristive films having variable oxygen content is measured using time domain thermoreflectance. Furthermore, the thermal transport is described by a two-partmodel where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. Additionally, the vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaO_x switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235298

Alternate ID(s):: OSTI ID: 1226772

Report Number(s):: SAND-2015-1010J; 566977; TRN: US1600384

Journal Information:: Applied Physics Letters, Vol. 107, Issue 02; Related Information: See also the erratum at http://dx.doi.org/10.1063/1.4928532; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 20 works

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Performance enhancement of TaO _x resistive switching memory using graded oxygen content Wang, B.; Xue, K. H.; Sun, H. J. Applied Physics Letters, Vol. 113, Issue 18 https://doi.org/10.1063/1.5048098	journal	October 2018
Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices Bäumer, Christoph; Heisig, Thomas; Arndt, Benedikt RWTH Aachen University https://doi.org/10.18154/rwth-2019-01070	text	January 2019
Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices Baeumer, Christoph; Heisig, Thomas; Arndt, Benedikt Faraday Discussions, Vol. 213 https://doi.org/10.1039/c8fd00108a	journal	January 2019

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