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Title: Space-and-time resolved spectroscopy of single GaN nanowires

Gallium nitridenanowires have garnered much attention in recent years due to their attractive optical and electrical properties. An understanding of carrier transport, relaxation, and recombination in these quasi-one-dimensional nanosystems is therefore important in optimizing them for various applications. We present ultrafast optical microscopic measurements on single GaNnanowires. Furthermore, our experiments, performed while varying the light polarization,excitation fluence, and position, give insight into the mechanisms governing carrier dynamics in these nanosystems.
 [1] ;  [2] ;  [3] ;  [3] ;  [3] ;  [4] ;  [4]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Indian Space Research Organization, Bangalor (India)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); New Mexico State Univ., Las Cruces, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0003-6951; 598503
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 26; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
36 MATERIALS SCIENCE III-V semiconductors; carrier relaxation times; nanowires; polarization; ultrafast measurements