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Title: Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.
 [1] ;  [2] ;  [3] ;  [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Yale Univ., New Haven, CT (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0021-8979; 563559
Grant/Contract Number:
AC04-94AL85000; SC0000957; ACI-1053575
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 19; Journal ID: ISSN 0021-8979
American Institute of Physics (AIP)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
36 MATERIALS SCIENCE epitaxy; interface diffusion; III-V semiconductors; velocity measurement; surface morphology