Cryogenic Preamplification of a Single-Electron-Transistor using a Silicon-Germanium Heterojunction-Bipolar-Transistor

Curry, Matthew J.; England, Troy Daniel; Bishop, Nathaniel; Ten Eyck, Gregory A.; Wendt, Joel R.; Pluym, Tammy; Lilly, Michael; Carr, Stephen M; Carroll, Malcolm S.

doi:10.1063/1.4921308

Title: Cryogenic Preamplification of a Single-Electron-Transistor using a Silicon-Germanium Heterojunction-Bipolar-Transistor

Journal Article · Thu May 21 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921308· OSTI ID:1235274

Curry, Matthew J. ^[1]; England, Troy Daniel ^[2]; Bishop, Nathaniel ^[2]; Ten Eyck, Gregory A. ^[2]; Wendt, Joel R. ^[2]; Pluym, Tammy ^[2]; Lilly, Michael ^[2]; Carr, Stephen M ^[1]; Carroll, Malcolm S. ^[2]

Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. Furthermore, the transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. We found that the circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235274

Alternate ID(s):: OSTI ID: 1237466

Report Number(s):: SAND2015-3432J; SAND-2015-1783J; 583595

Journal Information:: Applied Physics Letters, Vol. 106, Issue 20; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 24 works

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Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures Curry, M. J.; Rudolph, M.; England, T. D. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-52868-1	journal	November 2019
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