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Title: Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm–2s–1 and collect ~ 3000fb–1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.
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  1. Purdue Univ., West Lafayette, IN (United States)
  2. State Univ. of New York at Buffalo (SUNY), Buffalo, NY (United States)
  3. INFN Milano-Bicocca, Milano (Italy)
  4. Univ. and INFN Milano-Bicocca, Milano (Italy)
  5. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
  6. Univ. di Genova, Genova (Italy)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 1748-0221
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 10; Journal Issue: 08; Conference: 7th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Niagara Falls, ON (Canada); Journal ID: ISSN 1748-0221
Institute of Physics (IOP)
Research Org:
Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY CMS; pixel; Phase 2 upgrade; HL-LHC; thin, planar sensors; silicon