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Title: Linear magnetoresistance caused by mobility fluctuations in n-doped Cd3As2

Cd3As2 is a candidate three-dimensional Dirac semimetal which has exceedingly high mobility and nonsaturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5 and 300 K. We find that the nonsaturating linear magnetoresistance persists up to 65 T and it is likely caused by disorder effects, as it scales with the high mobility rather than directly linked to Fermi surface changes even when approaching the quantum limit. As a result of the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behavior with a nontrivial Berry phase shift, very light effective quasiparticle masses, and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin splitting (g~16).
 [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1] ;  [3] ;  [3] ;  [4] ;  [4] ;  [1] ;  [5]
  1. Univ. of Oxford, Oxford (United Kingdom)
  2. Lab. National des Champs Magnetiques Intenses (CNRS), Toulouse (France)
  3. Max-Planck-Institut fur Chemische Physik fester Stoffe, Dresden (Germany)
  4. Iowa State Univ., Ames, IA (United States)
  5. Naval Research Lab., Washington, D.C. (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0031-9007; PRLTAO
Grant/Contract Number:
EP/L001772/1; EP/I004475/1; EP/I017836/1EP/I004475/1; EP/K04074X/1; AC02- 07CH11358; N66001-11-1-4105
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 11; Journal ID: ISSN 0031-9007
American Physical Society (APS)
Research Org:
Ames Lab. (AMES), Ames, IA (United States)
Sponsoring Org:
Country of Publication:
United States