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Title: Imaging the oblique propagation of electrons in germanium crystals at low temperature and low electric field

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4939753· OSTI ID:1234271
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [3];  [3];  [3];  [4];  [4];  [4]
  1. Department of Physics, Stanford University, Stanford, California 94305, USA
  2. Department of Physics, Stanford University, Stanford, California 94305, USA, Department of Physics, Santa Clara University, Santa Clara, California 95053, USA
  3. SLAC National Accelerator Facility, Menlo Park, California 94025, USA
  4. Department of Physics, University of California, Berkeley, California 94720, USA

Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0009841
OSTI ID:
1234271
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 108 Journal Issue: 2; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

References (7)

Optically Induced Measurement of Electron and Hole Drift Velocities in a Germanium 〈100〉 CDMS Detector at 50 mK journal January 2012
Transport and Two-Species Capture of Electrons and Holes in Ultrapure Germanium at MilliKelvin Temperature journal January 2014
Intervalley Scattering of Hot Electrons in Germanium at Millikelvin Temperatures journal January 2014
Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering journal February 1956
Broadband cryogenic preamplifiers incorporating GaAs MESFETs for use with low‐temperature particle detectors journal October 1989
Spatial Imaging of Charge Transport in Germanium at Low Temperature journal January 2014
Hot Carrier Trapping in High-Purity and Doped Germanium Crystals at Millikelvin Temperatures journal January 2014

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