Plasmon-mediated energy relaxation in graphene

Ferry, D. K.; Somphonsane, R.; Ramamoorthy, H.; Bird, J. P.

doi:10.1063/1.4938760

Title: Plasmon-mediated energy relaxation in graphene

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4938760· OSTI ID:1468794

^[1]; Somphonsane, R. ^[2]; Ramamoorthy, H. ^[3]; Bird, J. P. ^[3]

Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering
King Mongkut’s Inst. of Technology, Bangkok (Thailand). Dept. of Physics
State Univ. of New York (SUNY), Buffalo, NY (United States). Dept. of Electrical Engineering

Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.

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Research Organization:: State Univ. of New York, Buffalo, NY (United States)

Sponsoring Organization:: USDOE; Thailand Research Fund

Grant/Contract Number:: FG02-04ER46180

OSTI ID:: 1468794

Alternate ID(s):: OSTI ID: 1234026

Journal Information:: Applied Physics Letters, Vol. 107, Issue 26; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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References (34)

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