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Title: Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)

SrTiO3 (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. We find that the valence band offset ranges from +0.2(1) eV to -0.2(1) eV depending on surface conditions for the film and substrate. From these results we extract a conduction band offset from -2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.
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Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0003-6951; 48341; KC0203020
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 13
American Institute of Physics (AIP)
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
Country of Publication:
United States
epitaxial; Environmental Molecular Sciences Laboratory