Direct observation of the E − resonant state in GaA s 1 − x B i x

Alberi, K.; Beaton, D. A.; Mascarenhas, A.

doi:10.1103/PhysRevB.92.241201

Title: Direct observation of the $E_{-}$ resonant state in $GaA s_{1 − x} B i_{x}$

Journal Article · Mon Dec 14 00:00:00 EST 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.92.241201· OSTI ID:1229588

Alberi, K.; Beaton, D. A.; Mascarenhas, A.

View Accepted Manuscript (Publisher)

Cite

Export

Save

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-80GO28308

OSTI ID:: 1229588

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Vol. 92 Journal Issue: 24; ISSN 1098-0121

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 12 works

Citation information provided by
Web of Science

References (28)

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys Bellaiche, L.; Wei, Su-Huai; Zunger, Alex Physical Review B, Vol. 56, Issue 16 https://doi.org/10.1103/PhysRevB.56.10233	journal	October 1997
Band Anticrossing in GaInNAs Alloys Shan, W.; Walukiewicz, W.; Ager, J. W. Physical Review Letters, Vol. 82, Issue 6 https://doi.org/10.1103/PhysRevLett.82.1221	journal	February 1999
Giant Spin-Orbit Bowing in ${GaAs}_{1 - x} {Bi}_{x}$ Fluegel, B.; Francoeur, S.; Mascarenhas, A. Physical Review Letters, Vol. 97, Issue 6 https://doi.org/10.1103/PhysRevLett.97.067205	journal	August 2006
Derivation of 12- and 14-band k · p Hamiltonians for dilute bismide and bismide-nitride semiconductors Broderick, Christopher A.; Usman, Muhammad; O'Reilly, Eoin P. Semiconductor Science and Technology, Vol. 28, Issue 12 https://doi.org/10.1088/0268-1242/28/12/125025	journal	November 2013
Bond-Length Distortions in Strained Semiconductor Alloys Woicik, J. C.; Pellegrino, J. G.; Steiner, B. Physical Review Letters, Vol. 79, Issue 25 https://doi.org/10.1103/PhysRevLett.79.5026	journal	December 1997
Third-derivative modulation spectroscopy with low-field electroreflectance Aspnes, D. E. Surface Science, Vol. 37 https://doi.org/10.1016/0039-6028(73)90337-3	journal	June 1973
In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy France, R.; Jiang, C. -S.; Ptak, A. J. Applied Physics Letters, Vol. 98, Issue 10 https://doi.org/10.1063/1.3562952	journal	March 2011
Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers Weyers, Markus; Sato, Michio; Ando, Hiroaki Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 7A https://doi.org/10.1143/JJAP.31.L853	journal	July 1992
Theory of Substitutional Deep Traps in Covalent Semiconductors Hjalmarson, Harold P.; Vogl, P.; Wolford, D. J. Physical Review Letters, Vol. 44, Issue 12 https://doi.org/10.1103/PhysRevLett.44.810	journal	March 1980
Valence band anticrossing in GaBixAs1−x Alberi, K.; Dubon, O. D.; Walukiewicz, W. Applied Physics Letters, Vol. 91, Issue 5 https://doi.org/10.1063/1.2768312	journal	July 2007
Trends in the electronic structure of dilute nitride alloys O'Reilly, E. P.; Lindsay, A.; Klar, P. J. Semiconductor Science and Technology, Vol. 24, Issue 3 https://doi.org/10.1088/0268-1242/24/3/033001	journal	February 2009
Evolution of electronic states in ${GaAs}_{1 - x} N_{x}$ probed by resonant Raman spectroscopy Mascarenhas, A.; Seong, M. J.; Yoon, S. Physical Review B, Vol. 68, Issue 23 https://doi.org/10.1103/PhysRevB.68.233201	journal	December 2003
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in ${GaAs}_{1 - x} N_{x}$ with $x < 0.03$ Perkins, J. D.; Mascarenhas, A.; Zhang, Yong Physical Review Letters, Vol. 82, Issue 16 https://doi.org/10.1103/PhysRevLett.82.3312	journal	April 1999
Theory of electronic structure evolution in GaAsN and GaPN alloys Kent, P. R. C.; Zunger, Alex Physical Review B, Vol. 64, Issue 11 https://doi.org/10.1103/PhysRevB.64.115208	journal	August 2001
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing Batool, Z.; Hild, K.; Hosea, T. J. C. Journal of Applied Physics, Vol. 111, Issue 11 https://doi.org/10.1063/1.4728028	journal	June 2012
Precise Determination of the Direct–Indirect Band Gap Energy Crossover Composition in Al _x Ga _{1- x} As Beaton, Daniel A.; Alberi, Kirstin; Fluegel, Brian Applied Physics Express, Vol. 6, Issue 7 https://doi.org/10.7567/APEX.6.071201	journal	July 2013
Band gap of GaAs1−xBix, 0<x<3.6% Francoeur, S.; Seong, M. -J.; Mascarenhas, A. Applied Physics Letters, Vol. 82, Issue 22 https://doi.org/10.1063/1.1581983	journal	June 2003
Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs Janotti, A.; Wei, Su-Huai; Zhang, S. B. Physical Review B, Vol. 65, Issue 11 https://doi.org/10.1103/PhysRevB.65.115203	journal	February 2002
Similar and dissimilar aspects of $III − V$ semiconductors containing $Bi$ versus $N$ Zhang, Yong; Mascarenhas, A.; Wang, L. -W. Physical Review B, Vol. 71, Issue 15 https://doi.org/10.1103/PhysRevB.71.155201	journal	April 2005
Negative charge, barrier heights, and the conduction‐band discontinuity in Al _x Ga _{1− x} As capacitors Hickmott, T. W.; Solomon, P. M.; Fischer, R. Journal of Applied Physics, Vol. 57, Issue 8 https://doi.org/10.1063/1.335221	journal	April 1985
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs Usman, Muhammad; Broderick, Christopher A.; Lindsay, Andrew Physical Review B, Vol. 84, Issue 24 https://doi.org/10.1103/PhysRevB.84.245202	journal	December 2011
Resonant state due to Bi in the dilute bismide alloy ${GaAs}_{1 - x} {Bi}_{x}$ Joshya, R. S.; Ptak, A. J.; France, R. Physical Review B, Vol. 90, Issue 16 https://doi.org/10.1103/PhysRevB.90.165203	journal	October 2014
Band discontinuity for GaAs/AlGaAs heterojunction determined by C ‐ V profiling technique Watanabe, Miyoko Oku; Yoshida, Jiro; Mashita, Masao Journal of Applied Physics, Vol. 57, Issue 12 https://doi.org/10.1063/1.334852	journal	June 1985
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs Deng, Hui-Xiong; Li, Jingbo; Li, Shu-Shen Physical Review B, Vol. 82, Issue 19 https://doi.org/10.1103/PhysRevB.82.193204	journal	November 2010
Contactless electroreflectance studies of ultra-dilute GaAs _{1− x} Bi _x alloys Bhusal, L.; Ptak, A. J.; France, R. Semiconductor Science and Technology, Vol. 24, Issue 3 https://doi.org/10.1088/0268-1242/24/3/035018	journal	February 2009
Interimpurity Recombinations Involving the Isoelectronic Trap Bismuth in Gallium Phosphide Dean, P. J.; Cuthbert, J. D.; Lynch, R. T. Physical Review, Vol. 179, Issue 3 https://doi.org/10.1103/PhysRev.179.754	journal	March 1969
Strain Fields and the Apparent Size of Donor Ions in GaP Morgan, T. N.; Maier, H. Physical Review Letters, Vol. 27, Issue 18 https://doi.org/10.1103/PhysRevLett.27.1200	journal	November 1971
Band structure of highly mismatched semiconductor alloys: Coherent potential approximation Wu, J.; Walukiewicz, W.; Haller, E. E. Physical Review B, Vol. 65, Issue 23 https://doi.org/10.1103/PhysRevB.65.233210	journal	June 2002

Similar Records

Observation of

e^{+} e^{-} \to π^{+} π^{-} π^{0} χ_{b J}

and Search for

X_{b} \to ω Υ (1 S)

\sqrt{s} = 10.867 GeV

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · Physical Review Letters · OSTI ID:1229588

He, X. H.; Shen, C. P.; Yuan, C. Z.; +162 more

Observation of

e^{+} e^{-} \to π^{+} π^{-} π^{0} χ_{b J}

and Search for

X_{b} \to ω Y (1 S)

\sqrt{s} = 10.867 GeV

Journal Article · Tue Sep 30 00:00:00 EDT 2014 · Physical Review Letters · OSTI ID:1229588

He, X. H.; Shen, C. P.; Yuan, C. Z.; +162 more

Localization behavior at bound Bi complex states in

GaA s_{1 - x} B i_{x}

Journal Article · Tue Jul 25 00:00:00 EDT 2017 · Physical Review Materials · OSTI ID:1229588

Alberi, K.; Christian, T. M.; Fluegel, B.; +3 more

Title: Direct observation of the E − resonant state in GaA s 1 − x B i x

Citation Formats

References (28)

Similar Records

Related Subjects

Title: Direct observation of the $E_{-}$ resonant state in $GaA s_{1 − x} B i_{x}$