Deep Subgap Feature in Amorphous Indium Gallium Zinc Oxide. Evidence Against Reduced Indium
- Binghamton Univ., NY (United States)
- National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. In spite of the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. We present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- SC00112704
- OSTI ID:
- 1229007
- Report Number(s):
- BNL-111082-2015-JA
- Journal Information:
- Physica Status Solidi. A, Applications and Materials Science, Vol. 212, Issue 7; ISSN 1862-6300
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
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