Compositional homogeneity and X-ray topographic analyses of CdTe_xSe_1-x grown by the vertical Bridgman technique

Journal Article · Sun Feb 01 00:00:00 EST 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2014.10.057· OSTI ID:1228972

Roy, U. N. ^[1]; Bolotnikov, A. E. ^[1]; Camarda, G. S. ^[1]; Cui, Y. ^[1]; Hossain, A. ^[1]; Lee, K. ^[2]; Lee, W. ^[2]; Tappero, R. ^[1]; Yang, Ge ^[1]; Cui, Y. ^[3]; Burger, A. ^[3]; James, R. B. ^[1]

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1. Brookhaven National Lab. (BNL), Upton, NY (United States)
2. Brookhaven National Lab. (BNL), Upton, NY (United States); Korea Univ., Seoul (Republic of Korea)
3. Fisk Univ., Nashville, TN (United States)

We grew CdTe_xSe_1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS’ X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTe_xSe_1-x crystals. Here, we noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC00112704
• OSTI ID: 1228972
• Report Number(s): BNL-111047-2015-JA
• Journal Information: Journal of Crystal Growth, Vol. 411, Issue C; ISSN 0022-0248
• Publisher: Elsevier
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
A1. characterization
A1. defects
A1. Te-inclusions
A1. Subgrain boundary
B2. CdTeSe
B2. Semiconducting II-VI materials