Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers
Journal Article
·
· Journal of Electronic Materials
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- SC00112704
- OSTI ID:
- 1228957
- Report Number(s):
- BNL-111032-2015-JA
- Journal Information:
- Journal of Electronic Materials, Vol. 44, Issue 5; ISSN 0361-5235
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
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