Challenges of nickel silicidation in CMOS technologies

Journal Article · Wed Apr 01 00:00:00 EDT 2015 · Microelectronic Engineering

DOI:https://doi.org/10.1016/j.mee.2014.12.013· OSTI ID:1228947

Breil, Nicolas ^[1]; Lavoie, Christian ^[2]; Ozcan, Ahmet  ^[1]; Baumann, Frieder ^[1]; Klymko, Nancy ^[1]; Nummy, Karen ^[1]; Sun, Bing ^[1]; Jordan-Sweet, Jean ^[2]; Yu, Jian ^[1]; Zhu, Frank ^[1]; Narasimha, Shreesh ^[1]; Chudzik, Michael ^[1]

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1. IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States)
2. IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC00112704
• OSTI ID: 1228947
• Report Number(s): BNL-111022-2015-JA
• Journal Information: Microelectronic Engineering, Vol. 137, Issue C; ISSN 0167-9317
• Publisher: Elsevier
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE