Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

Shcherbak, L.; Kopach, O.; Fochuk, P.; James, R. B.; Bolotnikov, A. E.

doi:10.1007/s11669-015-0364-8

Title: Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

Journal Article · Wed Jan 21 00:00:00 EST 2015 · Journal of Phase Equilibria and Diffusion

DOI:https://doi.org/10.1007/s11669-015-0364-8· OSTI ID:1228825

Shcherbak, L. ^[1]; Kopach, O. ^[1]; Fochuk, P. ^[1]; James, R. B. ^[2]; Bolotnikov, A. E. ^[1]

Chernivtsy National Univ., Chernivtsi (Ukraine)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D₀exp(–ΔE_a/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D₀, and the activation energy, ΔE_a, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)

Grant/Contract Number:: SC00112704

OSTI ID:: 1228825

Report Number(s):: BNL-108079-2015-JA; NN2001

Journal Information:: Journal of Phase Equilibria and Diffusion, Vol. 36, Issue 2; ISSN 1547-7037

Publisher:: ASM InternationalCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 12 works

Citation information provided by
Web of Science

References (51)

The relative magnitude of the diffusion constants of cadmium vacancies and indium–cadmium vacancy pairs in CdS and CdTe Chern, S. S.; Kröger, F. A. Physica Status Solidi (a), Vol. 25, Issue 1 https://doi.org/10.1002/pssa.2210250119	journal	September 1974
Behavior of Gold in Cadmium Telluride Crystals Teramoto, Iwao; Takayanagi, Shigetoshi Journal of the Physical Society of Japan, Vol. 17, Issue 7 https://doi.org/10.1143/JPSJ.17.1137	journal	July 1962
Diffusion of Indium in Cadmium Telluride Kato, Hideomi; Takayanagi, Shigetoshi Japanese Journal of Applied Physics, Vol. 2, Issue 4 https://doi.org/10.1143/JJAP.2.250	journal	April 1963
The diffusion of Mn in CdTe Jamil, N. Y.; Shaw, D. Semiconductor Science and Technology, Vol. 10, Issue 7 https://doi.org/10.1088/0268-1242/10/7/009	journal	July 1995
The diffusion of copper in cadmium telluride Jones, E. D.; Stewart, N. M.; Mullin, J. B. Journal of Crystal Growth, Vol. 117, Issue 1-4 https://doi.org/10.1016/0022-0248(92)90753-6	journal	February 1992
The diffusivity of the Cd interstitial in CdTe Shaw, D. Semiconductor Science and Technology, Vol. 27, Issue 3 https://doi.org/10.1088/0268-1242/27/3/035003	journal	January 2012
Modification of CdTe thin films by Zn reactive diffusion Dzhafarov, T. D.; Ongul, F. Journal of Physics D: Applied Physics, Vol. 38, Issue 20 https://doi.org/10.1088/0022-3727/38/20/002	journal	September 2005
Arrhenius results for the diffusion of Hg into CdTe Ahmed, M. U.; Jones, E. D.; Mullin, J. B. Journal of Crystal Growth, Vol. 159, Issue 1-4 https://doi.org/10.1016/0022-0248(95)00698-2	journal	February 1996
Chemical Diffusion in Cadmium Telluride Zanio, Kenneth Journal of Applied Physics, Vol. 41, Issue 5 https://doi.org/10.1063/1.1659145	journal	April 1970
The segregation of impurities and the self‐compensation problem in II‐VI compounds Pautrat, J. L.; Magnea, N.; Faurie, J. P. Journal of Applied Physics, Vol. 53, Issue 12 https://doi.org/10.1063/1.330464	journal	December 1982
Studies on the diffusion of the halogens into CdTe Malzbender, J.; Jones, E. D.; Shaw, N. Semiconductor Science and Technology, Vol. 11, Issue 5 https://doi.org/10.1088/0268-1242/11/5/015	journal	May 1996
Diffusion mechanisms in II–VI materials Shaw, D. Journal of Crystal Growth, Vol. 86, Issue 1-4 https://doi.org/10.1016/0022-0248(90)90806-V	journal	January 1988
The Meyer–Neldel rule for diffusion in Si and SiGe Zangenberg, N. R.; Nylandsted Larsen, A. Physica B: Condensed Matter, Vol. 340-342 https://doi.org/10.1016/j.physb.2003.09.124	journal	December 2003
Heavy element diffusion in cadmium telluride Hage-ali, M.; Mitchell, I. V.; Grob, J. J. Thin Solid Films, Vol. 19, Issue 2 https://doi.org/10.1016/0040-6090(73)90077-1	journal	December 1973
Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors Wolf, H.; Kronenberg, J.; Wagner, F. physica status solidi (b), Vol. 247, Issue 6 https://doi.org/10.1002/pssb.200983222	journal	March 2010
Study of silver and copper diffusion in p-type Hg 0.3 Cd 0.7 Te and CdTe by capacitance measurements Wartlick, B. O.; Blanchard, C.; Barbot, J. F. Materials Science and Engineering: B, Vol. 71, Issue 1-3 https://doi.org/10.1016/S0921-5107(99)00385-2	journal	February 2000
Determination of donor diffusion coefficients in p-type semiconductors from capacitance transients: application to Cu and Ag diffusion in Cd-rich Hg _1−x Cd _x Te Wartlick, B. O.; Barbot, J. F.; Blanchard, C. Philosophical Magazine B, Vol. 75, Issue 5 https://doi.org/10.1080/13642819708202345	journal	May 1997
Diffusion processes at the Cu-CdTe interface for evaporated and chemically plated Cu layers Mann, H.; Linker, G.; Meyer, O. Solid State Communications, Vol. 11, Issue 3 https://doi.org/10.1016/0038-1098(72)90035-X	journal	August 1972
Self-diffusion of cadmium and tellurium in cadmium telluride Borsenberger, P. M.; Stevenson, D. A. Journal of Physics and Chemistry of Solids, Vol. 29, Issue 8 https://doi.org/10.1016/0022-3697(68)90179-0	journal	August 1968
Chemical diffusion in CdTe:Cl Grill, R.; Nahlovskyy, B.; Belas, E. Semiconductor Science and Technology, Vol. 25, Issue 4 https://doi.org/10.1088/0268-1242/25/4/045019	journal	March 2010
Compensation Effects for the Diffusion Process Magomedov, M. N. High Temperature, Vol. 40, Issue 1, p. 142-144 https://doi.org/10.1023/A:1014254820420	journal	January 2002
The strange diffusivity of Ag atoms in CdTe Wolf, H.; Deicher, M.; Ostheimer, V. Physica B: Condensed Matter, Vol. 308-310 https://doi.org/10.1016/S0921-4526(01)00843-2	journal	December 2001
The meyer-neldel rule in semiconductors Metselaar, R.; Oversluizen, G. Journal of Solid State Chemistry, Vol. 55, Issue 3 https://doi.org/10.1016/0022-4596(84)90284-6	journal	December 1984
Shift of Ag diffusion profiles in CdTe by metal/semiconductor interfaces Wolf, H.; Kronenberg, J.; Wagner, F. Applied Physics Letters, Vol. 100, Issue 17 https://doi.org/10.1063/1.4709393	journal	April 2012
‘Meyer-Neldel Rule’: True History of its Development and its Intimate Connection to Classical Thermodynamics Starikov, E. B. Journal of Applied Solution Chemistry and Modeling, Vol. 3, Issue 1 https://doi.org/10.6000/1929-5030.2014.03.01.3	journal	March 2014
Studies on the diffusion of zinc and iodine into CdTe Jones, E. D.; Clark, J. C.; Malzbender, J. Journal of Electronic Materials, Vol. 24, Issue 5 https://doi.org/10.1007/BF02657966	journal	May 1995
Diffusion of phosphorus in CdTe Hoonnivathana, E.; Jones, E. D.; Viney, I. V. F. Journal of Electronic Materials, Vol. 27, Issue 6 https://doi.org/10.1007/s11664-998-0024-4	journal	June 1998
The diffusion of chlorine in CdTe Shaw, D.; Watson, E. Journal of Physics C: Solid State Physics, Vol. 17, Issue 28 https://doi.org/10.1088/0022-3719/17/28/011	journal	October 1984
A phenomenological model for the Meyer-Neldel rule Dyre, J. C. Journal of Physics C: Solid State Physics, Vol. 19, Issue 28 https://doi.org/10.1088/0022-3719/19/28/016	journal	October 1986
The solubility and diffusivity of In in CdTe Watson, E.; Shaw, D. Journal of Physics C: Solid State Physics, Vol. 16, Issue 3 https://doi.org/10.1088/0022-3719/16/3/013	journal	January 1983
Entropy–enthalpy compensation as a fundamental concept and analysis tool for systematical experimental data Starikov, E. B.; Nordén, B. Chemical Physics Letters, Vol. 538 https://doi.org/10.1016/j.cplett.2012.04.028	journal	June 2012
The diffusion of zinc in cadmium telluride Aslam, N.; Jones, E. D.; Noakes, T. C. Q. Journal of Crystal Growth, Vol. 117, Issue 1-4 https://doi.org/10.1016/0022-0248(92)90754-7	journal	February 1992
Anomalous Diffusion Profiles of Ag in CdTe due to Chemical Self-Diffusion Wolf, H.; Wagner, F.; Wichert, Th. Physical Review Letters, Vol. 94, Issue 12 https://doi.org/10.1103/PhysRevLett.94.125901	journal	April 2005
Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films Dzhafarov, T. D.; Caliskan, M. Journal of Physics D: Applied Physics, Vol. 40, Issue 13 https://doi.org/10.1088/0022-3727/40/13/014	journal	June 2007
Sulphur diffusion in CdTe and the phase diagram of the CdS–CdTe pseudo-binary alloy Lane, D. W.; Conibeer, G. J.; Wood, D. A. Journal of Crystal Growth, Vol. 197, Issue 3 https://doi.org/10.1016/S0022-0248(98)00813-6	journal	February 1999
The defect structure of CdTe: Self-diffusion data Chern, S. S.; Kroger, F. A. Journal of Solid State Chemistry, Vol. 14, Issue 1 https://doi.org/10.1016/0022-4596(75)90360-6	journal	May 1975
Erratum: Observation of Hg diffusion in CdTe by means of 40 MeV O ⁵ ⁺ ion backscattering [Appl. Phys. Lett. 4 4 , 996 (1984)] Takita, K.; Murakami, K.; Otake, H. Applied Physics Letters, Vol. 47, Issue 10 https://doi.org/10.1063/1.96440	journal	November 1985
The thermodynamic compensation law Mialhe, P.; Charles, J. P.; Khoury, A. Journal of Physics D: Applied Physics, Vol. 21, Issue 3 https://doi.org/10.1088/0022-3727/21/3/001	journal	March 1988
Diffusion of Se in CdTe Kato, Hideomi; Yokozawa, Masami; Takayanagi, Shigetoshi Japanese Journal of Applied Physics, Vol. 4, Issue 12 https://doi.org/10.1143/JJAP.4.1019	journal	December 1965
The defect structure of CdTe Kröger, F. A. Revue de Physique Appliquée, Vol. 12, Issue 2 https://doi.org/10.1051/rphysap:01977001202020500	journal	January 1977
The diffusion of mercury in cadmium telluride Jones, E. D.; Thambipillai, V.; Mullin, J. B. Journal of Crystal Growth, Vol. 118, Issue 1-2 https://doi.org/10.1016/0022-0248(92)90043-I	journal	March 1992
The Role of Intrinsic Defects for the Diffusion of Ag and Cu in CdTe Wolf, Herbert; Wagner, F.; Wichert, Th. Defect and Diffusion Forum, Vol. 237-240 https://doi.org/10.4028/www.scientific.net/DDF.237-240.491	journal	April 2005
Isokinetic Relationship, Isoequilibrium Relationship, and Enthalpy−Entropy Compensation Liu, Lei; Guo, Qing-Xiang Chemical Reviews, Vol. 101, Issue 3 https://doi.org/10.1021/cr990416z	journal	March 2001
Diffusion of gallium in cadmium telluride Blackmore, G. W.; Jones, E. D.; Mullin, J. B. Materials Science and Engineering: B, Vol. 16, Issue 1-3 https://doi.org/10.1016/0921-5107(93)90040-T	journal	January 1993
Surface segregation of Ag in CdTe induced by photon absorption Tregilgas, J. H.; Gnade, B. E. Journal of Applied Physics, Vol. 55, Issue 2 https://doi.org/10.1063/1.333068	journal	January 1984
Diffusion-melting correlations and the compensation effect in atomic diffusion in Si and Ge Khait, Y. L.; Beserman, R.; Shaw, D. Physical Review B, Vol. 50, Issue 20 https://doi.org/10.1103/PhysRevB.50.14893	journal	November 1994
P. Capper (Hrsg.). Properties of Narrow Gap Cadmium-based Compounds. INSPEC, the Institution of Electrical Engineers, London 1994 XXI + 618 Seiten incl. Subject Index., US $ 295.00 ISBN 085296–880–9 Süptitz, P. Crystal Research and Technology, Vol. 30, Issue 3 https://doi.org/10.1002/crat.2170300311	journal	January 1995
Crystal Growth and Surfaces CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications https://doi.org/10.1016/B978-0-08-096513-0.00001-7	book	April 2010
Chemical diffusion of Hg in CdTe Hogg, J. H. C.; Bairstow, A.; Matthews, G. W. Materials Science and Engineering: B, Vol. 16, Issue 1-3 https://doi.org/10.1016/0921-5107(93)90042-L	journal	January 1993
Some Diffusion and Solubility Measurements of Cu in CdTe Woodbury, H. H.; Aven, M. Journal of Applied Physics, Vol. 39, Issue 12 https://doi.org/10.1063/1.1655999	journal	November 1968
Chemical Self-Diffusion in CdTe Grill, R.; Turjanska, L.; Franc, J. physica status solidi (b), Vol. 229, Issue 1 https://doi.org/10.1002/1521-3951(200201)229:1<161::AID-PSSB161>3.0.CO;2-3	journal	January 2002

Cited By (1)

Modeling the evolved microstructure of cement pastes governed by diffusion through barrier shells of C–S–H Zhou, W.; Duan, L.; Tang, S. W. Journal of Materials Science, Vol. 54, Issue 6 https://doi.org/10.1007/s10853-018-03193-x	journal	December 2018

Similar Records

Diffusion of zirconium in niobium: The influence of fast diffusing impurities on the self-diffusion isotope effect

Journal Article · Sun Jan 15 00:00:00 EST 1978 · Phys. Rev., B; (United States) · OSTI ID:1228825

Einziger, R E; Mundy, J N

The effect of ion implantation and impurities on the interdiffusion in Si/Ge amorphous artificial multilayers

Miscellaneous · Sun Jan 01 00:00:00 EST 1989 · OSTI ID:1228825

Park, Byungwoo

Effect of heterovalent impurities codiffusing with monovalent tracers in ionic crystals

Journal Article · Tue Jul 15 00:00:00 EDT 1975 · Phys. Rev., B; (United States) · OSTI ID:1228825

Mitchell, J L; Lazarus, D

Related Subjects

97 MATHEMATICS AND COMPUTING
CdTe
impurities diffusion
Arrhenius

Title: Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

Citation Formats

References (51)

Cited By (1)

Similar Records

Related Subjects