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Title: Empirical correlations between the arrhenius' parameters of impurities' diffusion coefficients in CdTe crystals

Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D0exp(–ΔEa/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D0, and the activation energy, ΔEa, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. As a result, reasons of the lack of correspondence of the data to compensative dependence are discussed.
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  1. Chernivtsy National Univ., Chernivtsi (Ukraine)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 1547-7037; NN2001
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Phase Equilibria and Diffusion
Additional Journal Information:
Journal Volume: 36; Journal Issue: 2; Journal ID: ISSN 1547-7037
ASM International
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
Country of Publication:
United States
97 MATHEMATICS AND COMPUTING CdTe; impurities diffusion; Arrhenius