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Title: A study of Channeling, Volume Reflection and Volume Capture of 3.35 - 14.0 GeV Electrons in a bent Silicon Crystal

We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasi-mosaic silicon crystal. Additionally, these phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5 and 14.0 GeV with a crystal with bending radius of 0.15m, corresponding to curvatures of 0.070, 0.088, 0.13, 0.22 and 0.29 times the critical curvature respectively. We have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission and the widths of the distribution of channeled particles parallel and orthogonal to the plane.
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  1. Aarhus Univ. (Denmark)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  3. Univ. of Ferrara (Italy)
  4. California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physics Letters B
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
US DOE Office of Science (DOE SC); National Science Foundation (NSF), Arlington, VA (United States); Danish Council for Independent Research, INFN (Denmark)
Country of Publication:
United States