Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs
Abstract
We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.
- Authors:
-
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering and Radiological Sciences
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering; Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1370088
- Alternate Identifier(s):
- OSTI ID: 1228532
- Grant/Contract Number:
- SC0000957
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 6; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Warren, M. V., Canniff, J. C., Chi, H., Naab, F., Stoica, V. A., Clarke, R., Uher, C., and Goldman, R. S. Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs. United States: N. p., 2015.
Web. doi:10.1063/1.4906992.
Warren, M. V., Canniff, J. C., Chi, H., Naab, F., Stoica, V. A., Clarke, R., Uher, C., & Goldman, R. S. Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs. United States. https://doi.org/10.1063/1.4906992
Warren, M. V., Canniff, J. C., Chi, H., Naab, F., Stoica, V. A., Clarke, R., Uher, C., and Goldman, R. S. 2015.
"Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs". United States. https://doi.org/10.1063/1.4906992. https://www.osti.gov/servlets/purl/1370088.
@article{osti_1370088,
title = {Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs},
author = {Warren, M. V. and Canniff, J. C. and Chi, H. and Naab, F. and Stoica, V. A. and Clarke, R. and Uher, C. and Goldman, R. S.},
abstractNote = {We have examined the influence of Bi on embedded nanocomposite formation and the resulting thermoelectric properties of GaAs. Bi implantation amorphizes the GaAs matrix, reducing both the free carrier concentration (n) and the electrical conductivity (σ). Following rapid thermal annealing, the matrix is transformed to single crystal GaAs with embedded Bi nanocrystals (NCs). In comparison to a GaAs reference, the Bi NC-containing films exhibit a sizeable reduction in thermal conductivity (κ), leading to a 30% increase in the thermoelectric figure-of-merit. We also present a universal trend for the influence of microstructure on the n-dependence of σ and κ.},
doi = {10.1063/1.4906992},
url = {https://www.osti.gov/biblio/1370088},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 6,
volume = 117,
place = {United States},
year = {Sat Feb 14 00:00:00 EST 2015},
month = {Sat Feb 14 00:00:00 EST 2015}
}
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