Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2 Heterojunctions
- Chinese Academy of Sciences (CAS), Beijing (China)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
In Van der Waals (vdW) p–n heterojunctions consisting of various 2D layer compounds are fascinating new artificial materials that can possess novel physics and functionalities enabling the next-generation of electronics and optoelectronics devices. Here, it is reported that the WSe2/WS2 p–n heterojunctions perform novel electrical transport properties such as distinct rectifying, ambipolar, and hysteresis characteristics. Intriguingly, the novel tunable polarity transition along a route of n-“anti-bipolar”–p-ambipolar is observed in the WSe2/WS2 heterojunctions owing to the successive work of conducting channels of junctions, p-WSe2 and n-WS2 on the electrical transport of the whole systems. Moreover, the type-II band alignment we obtained from first principle calculations and built-in potential in this vdW heterojunction can also facilitate the efficient electron–hole separation, thus enabling the significant photovoltaic effect and a much enhanced self-driven photoswitching response in this system.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1227674
- Report Number(s):
- NREL/JA-5900-65475
- Journal Information:
- Small, Vol. 11, Issue 40; Related Information: Small; ISSN 1613-6810
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
Similar Records
Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
Correlated insulating states at fractional fillings of the WS2/WSe2 moiré lattice