Profiling the local carrier concentration across a semiconductor quantum dot

Walrath, J. C.; Lin, Yen-Hsiang; Huang, S.; Goldman, R. S.

doi:10.1063/1.4919919

Title: Profiling the local carrier concentration across a semiconductor quantum dot

Journal Article · Mon May 11 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4919919· OSTI ID:1370104

^[1]; Lin, Yen-Hsiang ^[1]; Huang, S. ^[2];

^[3]

Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics; Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering

We profile the local carrier concentration, n, across epitaxial InAs/GaAs quantum dots (QDs) consisting of 3D islands on top of a 2D alloy layer. Here, we use scanning thermoelectric microscopy to measure a profile of the temperature gradient-induced voltage, which is converted to a profile of the local Seebeck coefficient, S. The S profile is then converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. Our combined computational-experimental approach suggests a reduced carrier concentration in the QD center in comparison to that of the 2D alloy layer. The relative roles of free carrier trapping and/or dopant expulsion are discussed.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC); Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0000957; FG02-06ER46339

OSTI ID:: 1370104

Alternate ID(s):: OSTI ID: 1226741

Journal Information:: Applied Physics Letters, Vol. 106, Issue 19; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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References (33)

Control of InAs∕GaAs quantum dot density and alignment using modified buffer layers Ye, W.; Hanson, S.; Reason, M. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 4 https://doi.org/10.1116/1.1949215	journal	January 2005
Influence of Mn dopants on InAs/GaAs quantum dot electronic states Dasika, V. D.; Semichaevsky, A. V.; Petropoulos, J. P. Applied Physics Letters, Vol. 98, Issue 14 https://doi.org/10.1063/1.3567510	journal	April 2011
Strain relaxation in InAs∕InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling Chen, J. F.; Hsiao, R. S.; Chen, Y. P. Applied Physics Letters, Vol. 87, Issue 14 https://doi.org/10.1063/1.2081132	journal	October 2005
Band gap engineering of amorphous silicon quantum dots for light-emitting diodes Park, Nae-Man; Kim, Tae-Soo; Park, Seong-Ju Applied Physics Letters, Vol. 78, Issue 17 https://doi.org/10.1063/1.1367277	journal	April 2001
Dislocation formation mechanism in strained In _x Ga _{1− x} As islands grown on GaAs(001) substrates Chen, Y.; Lin, X. W.; Liliental‐Weber, Z. Applied Physics Letters, Vol. 68, Issue 1 https://doi.org/10.1063/1.116773	journal	January 1996
Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices Huang, S.; Semichaevsky, A. V.; Webster, L. Journal of Applied Physics, Vol. 110, Issue 7 https://doi.org/10.1063/1.3631785	journal	October 2011
Effects of the quantum dot ripening in high-coverage InAs∕GaAs nanostructures Frigeri, P.; Nasi, L.; Prezioso, M. Journal of Applied Physics, Vol. 102, Issue 8 https://doi.org/10.1063/1.2795661	journal	October 2007
Oxidation as an assistant tool for structural analysis of inhomogeneous nanoscale InAs/AlAs(001) island system Zolotaryov, A.; Bolz, A.; Schramm, A. physica status solidi (a), Vol. 204, Issue 8 https://doi.org/10.1002/pssa.200675707	journal	August 2007
Nanoscale Mapping of Strain and Composition in Quantum Dots Using Kelvin Probe Force Microscopy Shusterman, S.; Raizman, A.; Sher, A. Nano Letters, Vol. 7, Issue 7 https://doi.org/10.1021/nl071031w	journal	July 2007
A simple thermodynamic model for the doping and alloying of nanoparticles Petropoulos, J. P.; Cristiani, T. R.; Dongmo, P. B. Nanotechnology, Vol. 22, Issue 24 https://doi.org/10.1088/0957-4484/22/24/245704	journal	April 2011
Quantifying the local Seebeck coefficient with scanning thermoelectric microscopy Walrath, J. C.; Lin, Y. H.; Pipe, K. P. Applied Physics Letters, Vol. 103, Issue 21 https://doi.org/10.1063/1.4829755	journal	November 2013
Effect of donor-complex-defect-induced dipole field on InAs∕GaAs quantum dot infrared photodetector activation energy Zhao, Z. Y.; Yi, C.; Lantz, K. R. Applied Physics Letters, Vol. 90, Issue 23 https://doi.org/10.1063/1.2747199	journal	June 2007
Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell Martí, A.; Antolín, E.; Stanley, C. R. Physical Review Letters, Vol. 97, Issue 24 https://doi.org/10.1103/PhysRevLett.97.247701	journal	December 2006
Far-infrared photoconductivity in self-organized InAs quantum dots Phillips, J.; Kamath, K.; Bhattacharya, P. Applied Physics Letters, Vol. 72, Issue 16 https://doi.org/10.1063/1.121252	journal	April 1998
Band-Gap Determination of the Native Oxide Capping Quantum Dots by Use of Different Kinds of Conductive AFM Probes: Example of InAs/GaAs Quantum Dots Smaali, Kacem; El Hdiy, Abbdelillah; Molinari, Michael IEEE Transactions on Electron Devices, Vol. 57, Issue 6 https://doi.org/10.1109/TED.2010.2046076	journal	June 2010
The best thermoelectric. Mahan, G. D.; Sofo, J. O. Proceedings of the National Academy of Sciences, Vol. 93, Issue 15 https://doi.org/10.1073/pnas.93.15.7436	journal	July 1996
Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots Wang, J. S.; Chen, J. F.; Huang, J. L. Applied Physics Letters, Vol. 77, Issue 19 https://doi.org/10.1063/1.1323735	journal	November 2000
Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy De Wolf, P.; Stephenson, R.; Trenkler, T. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 1 https://doi.org/10.1116/1.591198	journal	January 2000
Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots? Chen, Zi-Bin; Lei, Wen; Chen, Bin Nanoscale Research Letters, Vol. 7, Issue 1 https://doi.org/10.1186/1556-276X-7-486	journal	January 2012
A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh Tan, I‐H.; Snider, G. L.; Chang, L. D. Journal of Applied Physics, Vol. 68, Issue 8 https://doi.org/10.1063/1.346245	journal	October 1990
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs Rimada, J. C.; Prezioso, M.; Nasi, L. Materials Science and Engineering: B, Vol. 165, Issue 1-2 https://doi.org/10.1016/j.mseb.2008.10.007	journal	November 2009
Electrical characterization of InAs/GaAs quantum dot structures Gombia, E.; Mosca, R.; Franchi, S. Materials Science and Engineering: C, Vol. 26, Issue 5-7 https://doi.org/10.1016/j.msec.2005.09.018	journal	July 2006
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors Feenstra, R. M. Physical Review B, Vol. 50, Issue 7 https://doi.org/10.1103/PhysRevB.50.4561	journal	August 1994
Three-dimensional modeling of nanoscale Seebeck measurements by scanning thermoelectric microscopy Bian, Zhixi; Shakouri, Ali; Shi, Li Applied Physics Letters, Vol. 87, Issue 5 https://doi.org/10.1063/1.2008381	journal	August 2005
Lattice thermal resistivity of III–V compound alloys Adachi, Sadao Journal of Applied Physics, Vol. 54, Issue 4 https://doi.org/10.1063/1.332820	journal	April 1983
Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications Chen, J. X.; Markus, A.; Fiore, A. Journal of Applied Physics, Vol. 91, Issue 10 https://doi.org/10.1063/1.1476069	journal	January 2002
Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands Huang, S.; Kim, S. J.; Levy, R. Applied Physics Letters, Vol. 103, Issue 13 https://doi.org/10.1063/1.4822052	journal	September 2013
1.3 μm room-temperature GaAs-based quantum-dot laser Huffaker, D. L.; Park, G.; Zou, Z. Applied Physics Letters, Vol. 73, Issue 18 https://doi.org/10.1063/1.122534	journal	November 1998
Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy Giddings, A. D.; Keizer, J. G.; Hara, M. Physical Review B, Vol. 83, Issue 20 https://doi.org/10.1103/PhysRevB.83.205308	journal	May 2011
Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution Lyeo, H. -K. Science, Vol. 303, Issue 5659 https://doi.org/10.1126/science.1091600	journal	February 2004
Defects in nanostructures with ripened InAs/GaAs quantum dots Nasi, L.; Bocchi, C.; Germini, F. Journal of Materials Science: Materials in Electronics, Vol. 19, Issue S1 https://doi.org/10.1007/s10854-008-9657-6	journal	March 2008
Characterization of oxide layers on GaAs substrates Allwood, D. A.; Carline, R. T.; Mason, N. J. Thin Solid Films, Vol. 364, Issue 1-2 https://doi.org/10.1016/S0040-6090(99)00959-1	journal	March 2000
Doping characterization of InAs∕GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy Zhao, Z. Y.; Zhang, W. M.; Yi, C. Applied Physics Letters, Vol. 92, Issue 9 https://doi.org/10.1063/1.2889938	journal	March 2008

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