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Title: Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4905180· OSTI ID:1226642
 [1];  [2];  [3];  [2];  [3];  [1];  [2];  [3];  [1]
  1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
  3. Harvard University, Cambridge, Massachusetts 02139, USA

Sponsoring Organization:
USDOE
OSTI ID:
1226642
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 105 Journal Issue: 26; ISSN 0003-6951
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 76 works
Citation information provided by
Web of Science

References (24)

Structural and Electrical Characterizations of Electrodeposited p-Type Semiconductor Cu[sub 2]O Films journal January 2005
Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing journal April 2013
The origin of electrical property deterioration with increasing Mg concentration in ZnMgO:Ga journal February 2012
Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation journal March 2001
Work function of ITO substrates and band-offsets at the TPD/ITO interface determined by photoelectron spectroscopy journal June 2000
Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells journal May 2014
Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials journal June 1980
The electrical properties and the interfaces of Cu2O/ZnO/ITO p–i–n heterojunction journal August 2004
Absorption coefficient of bulk and thin film Cu2O journal October 2011
Improved Cu 2 O-Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p-n Junction journal April 2014
Strong Valence-Band Offset Bowing of ZnO 1 x S x Enhances p -Type Nitrogen Doping of ZnO-like Alloys journal October 2006
Effects of Mg composition on open circuit voltage of Cu2O–MgxZn1−xO heterojunction solar cells journal January 2012
The band alignment of Cu 2 O/ZnO and Cu 2 O/GaN heterostructures journal February 2012
Intrinsic limitations to the doping of wide-gap semiconductors journal January 2001
Optical Properties and Electronic Structure of Amorphous Germanium journal January 1966
High-Efficiency Cu 2 O-Based Heterojunction Solar Cells Fabricated Using a Ga 2 O 3 Thin Film as N-Type Layer journal April 2013
A recombination analysis of Cu(In,Ga)Se2 solar cells with low and high Ga compositions journal May 2014
Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells journal January 2013
Variations of ionization potential and electron affinity as a function of surface orientation: The case of orthorhombic SnS journal May 2014
“In situ” XPS study of band structures at Cu2O/TiO2 heterojunctions interface journal September 2009
Obtaining a higherVoc in HIT cells journal January 2005
The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review journal August 2002
Binary copper oxide semiconductors: From materials towards devices journal June 2012
Valence band offset of Cu 2 O/In 2 O 3 heterojunction determined by X-ray photoelectron spectroscopy journal October 2011

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