Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices

Bakan, Gokhan; Gokirmak, Ali; Silva, Helena

doi:10.1063/1.4904746

Title: Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices

Authors:

^[1]; Gokirmak, Ali ^[2]; Silva, Helena ^[2]

Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269-4157, USA, National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269-4157, USA

Publication Date:: Sun Dec 21 00:00:00 EST 2014

Sponsoring Org.:: USDOE

OSTI Identifier:: 1226620

Grant/Contract Number:: SC0005038

Resource Type:: Journal Article: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 116 Journal Issue: 23; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Bakan, Gokhan, Gokirmak, Ali, and Silva, Helena. Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4904746.

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                    Bakan, Gokhan, Gokirmak, Ali, & Silva, Helena. Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices.  United States.  https://doi.org/10.1063/1.4904746

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                    Bakan, Gokhan, Gokirmak, Ali, and Silva, Helena. 2014.  
        "Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices".  United States.  https://doi.org/10.1063/1.4904746.

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@article{osti_1226620,

  title        = {Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices},

  author       = {Bakan, Gokhan and Gokirmak, Ali and Silva, Helena},

  abstractNote = {},

  doi          = {10.1063/1.4904746},

  url          = {https://www.osti.gov/biblio/1226620},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 23,

  volume       = 116,

  place        = {United States},

  year         = {Sun Dec 21 00:00:00 EST 2014},

  month        = {Sun Dec 21 00:00:00 EST 2014}

}

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Publisher's Version of Record at https://doi.org/10.1063/1.4904746

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Cited by: 6 works

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Works referenced in this record:

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature
journal, September 2012

Bakan, Gokhan; Adnane, Lhacene; Gokirmak, Ali
Journal of Applied Physics, Vol. 112, Issue 6
https://doi.org/10.1063/1.4754795

Modeling of Thermoelectric Effects in Phase Change Memory Cells
journal, February 2014

Faraclas, Azer; Bakan, Gokhan; Adnane, L'Hacene
IEEE Transactions on Electron Devices, Vol. 61, Issue 2
https://doi.org/10.1109/TED.2013.2296305

High-temperature thermoelectric transport at small scales: Thermal generation, transport and recombination of minority carriers
journal, September 2013

Bakan, Gokhan; Khan, Niaz; Silva, Helena
Scientific Reports, Vol. 3, Issue 1
https://doi.org/10.1038/srep02724

Voltage polarity effects in Ge ₂ Sb ₂ Te ₅ -based phase change memory devices
journal, September 2011

Padilla, Alvaro; Burr, Geoffrey W.; Rettner, Charles T.
Journal of Applied Physics, Vol. 110, Issue 5
https://doi.org/10.1063/1.3626047

Phase change materials and phase change memory
journal, August 2014

Raoux, Simone; Xiong, Feng; Wuttig, Matthias
MRS Bulletin, Vol. 39, Issue 8
https://doi.org/10.1557/mrs.2014.139

The impact of hole-induced electromigration on the cycling endurance of phase change memory
conference, December 2010

Lee, M. H.; Cheek, R.; Chen, C. F.
2010 IEEE International Electron Devices Meeting (IEDM), 2010 International Electron Devices Meeting
https://doi.org/10.1109/IEDM.2010.5703440

Electrical and optical characteristics of vacuum-sealed polysilicon microlamps
journal, June 1992

Mastrangelo, C. H.; Yeh, J. H. -J.; Muller, R. S.
IEEE Transactions on Electron Devices, Vol. 39, Issue 6
https://doi.org/10.1109/16.137316

Local synthesis of silicon nanowires and carbon nanotubes on microbridges
journal, June 2003

Englander, Ongi; Christensen, Dane; Lin, Liwei
Applied Physics Letters, Vol. 82, Issue 26
https://doi.org/10.1063/1.1587262

Heterogeneous nanometer-scale Joule and Peltier effects in sub-25 nm thin phase change memory devices
journal, September 2014

Grosse, Kyle L.; Pop, Eric; King, William P.
Journal of Applied Physics, Vol. 116, Issue 12
https://doi.org/10.1063/1.4896492

Polarity-dependent reversible resistance switching in Ge–Sb–Te phase-change thin films
journal, October 2007

Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George
Applied Physics Letters, Vol. 91, Issue 15
https://doi.org/10.1063/1.2798242

Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells
conference, December 2007

Castro, D. Tio; Goux, L.; Hurkx, G. A. M.
2007 IEEE International Electron Devices Meeting
https://doi.org/10.1109/IEDM.2007.4418934

Self-heating of silicon microwires: Crystallization and thermoelectric effects
journal, April 2011

Bakan, Gokhan; Khan, Niaz; Cywar, Adam
Journal of Materials Research, Vol. 26, Issue 9
https://doi.org/10.1557/jmr.2011.32

Thermography on a suspended microbridge using confocal Raman scattering
journal, May 2006

Jungen, Alain; Stampfer, Christoph; Hierold, Christofer
Applied Physics Letters, Vol. 88, Issue 19
https://doi.org/10.1063/1.2202095

Voltage polarity effects in GST-based phase change memory: Physical origins and implications
conference, December 2010

Padilla, A.; Burr, G. W.; Virwani, K.
2010 IEEE International Electron Devices Meeting (IEDM), 2010 International Electron Devices Meeting
https://doi.org/10.1109/IEDM.2010.5703444

Thermoelectric heating of Ge₂Sb₂Te₅ in phase change memory devices
journal, March 2010

Suh, Dong-Seok; Kim, Cheolkyu; Kim, Kijoon H. P.
Applied Physics Letters, Vol. 96, Issue 12
https://doi.org/10.1063/1.3259649

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Similar Records

Title: Suppression of thermoelectric Thomson effect in silicon microwires under large electrical bias and implications for phase-change memory devices

Citation Formats

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Polarity-dependent reversible resistance switching in Ge–Sb–Te phase-change thin films journal, October 2007

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Voltage polarity effects in Ge ₂ Sb ₂ Te ₅ -based phase change memory devices
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Electrical and optical characteristics of vacuum-sealed polysilicon microlamps
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Heterogeneous nanometer-scale Joule and Peltier effects in sub-25 nm thin phase change memory devices
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Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells
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