Two-Step Annealing Study of Cuprous Oxide for Photovoltaic Applications
Journal Article
·
· IEEE Journal of Photovoltaics
- Massachusetts Institute of Technology (MIT), Cambridge, MA (United States)
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Institute of Energy Conversion, Newark, DE (United States)
In this report the properties of large grain cuprous oxide (Cu 2 O) foils are explored after the implementation of a controlled postgrowth annealing process. P-type foils with a wide range of carrier density are demonstrated, enabling a promising processing window for wide bandgap solar cell devices. Hall measurements at room temperature show increased majority carrier concentration after nitrogen annealing and a reduction in mobility. The progressive change in resistivity with annealing temperature is shown, with values approaching 100 Ω·cm. Carrier recombination, measured by microwave photoconductance decay, shows a discrete change upon annealing.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Research Foundation Singapore; National Science Foundation (NSF)
- Grant/Contract Number:
- AC36-08GO28308; ECCS-1150878; DMR-0819762; ECS-0335765
- OSTI ID:
- 1225337
- Report Number(s):
- NREL/JA-5J00-65116
- Journal Information:
- IEEE Journal of Photovoltaics, Vol. 5, Issue 5; Related Information: IEEE Journal of Photovoltaics; ISSN 2156-3381
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 3 works
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